Dry etching apparatus and method
US5368685A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1993 |
| Grant date | Nov 29, 1994 |
| Priority date | — |
| Expiry date | Mar 24, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At an effective exhaust speed of 1200 liter/s, high frequency power with power surface density of 4.5 W/cm.sup.2 is made to discharge high density plasma, thereby carrying out dry etching. With a gas residence time of 100 ms or less, a gas flow rate controller is provided which has a response time substantially equal to the gas residence time. Etching can be performed at high speed with deposit reaction restrained and high ion current density. Because of the enhanced ion current density, etching providing high selectivity can be made with lowered ion energy. The time required for gas exchange in time modulation etching, multi-step etching and attachment/removal of electrostatic adsorption can be shortened to improve the etching throughput.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.