Method for producing a semiconductor device
US5369044A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 20, 1993 |
| Grant date | Nov 29, 1994 |
| Priority date | — |
| Expiry date | Jul 20, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/11
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for producing a field effect transistor including a layer in which a two-dimensional electron gas is formed includes forming source and drain electrodes spaced from each other on a substrate structure including the layer in which a two-dimensional electron gas is formed. First and second resist films are sequentially applied to the structure and a stripe-shaped first opening is formed in the second resist film between the source and drain electrodes and extending in a longitudinal direction, perpendicular to a line connecting the source and drain electrodes. A plurality of second openings narrower than the first opening are formed within the first resist film in the first opening. The second openings are arranged at intervals along the longitudinal direction of the first opening. The second openings may be used as an etching mask to form recesses in the substrate structure not reaching the layer in which the two-dimensional electron gas is formed. A gate electrode is formed by depositing a gate metal on the remaining parts of the first and second resist films and in the second openings followed by lifting off unneeded parts of the gate metal and the first and second resist…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.