Method of making and sealing a semiconductor device having an air path therethrough
US5369057A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1993 |
| Grant date | Nov 29, 1994 |
| Priority date | — |
| Expiry date | Dec 21, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This invention generally relates to the provision of a vent path during the bonding of silicon wafers and the subsequent encapsulation of the individual devices. A double-sided polished silicon wafer is used for the device wafer. The device wafer includes circuitry, thin membranes and metal interconnections. When bonding a bottom wafer to the device wafer, a vented path exists between the wafers. The venting path includes serpentine shape channel formed by interdigitated fingers and cavities. The cavity and the interdigitated patterns can be etched either together or separately into either wafer. A top wafer has a cavity formed therein. When the top device and bottom wafers are bonded together, the venting path is sealed by dipping the device in a sealing liquid. The serpentine path prevents the sealing liquid from reaching the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.