Conductive diffusion barrier of titanium nitride in ohmic contact with a plurality of doped layers therefor
US5369304A · kind A · utility
4Cited by
3References
6Claims
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Key dates
| Filing date | Aug 14, 1992 |
| Grant date | Nov 29, 1994 |
| Priority date | — |
| Expiry date | Aug 14, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
Abstract
A plurality of doped areas (12, 13, 14) are formed on a surface of a semiconductor wafer. A titanium nitride layer (17) is used for covering the plurality of doped areas (12, 13, 14) and for providing electrical connection between the doped areas (12, 13, 14). The titanium nitride layer (17) substantially prevents dopants from diffusing into the titanium nitride ( 17 ) and subsequently counterdoping the doped areas (12, 13, 14) during subsequent high temperature processing operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.