Method of filling contacts in semiconductor devices
US5371042A · kind A · utility
151Cited by
7References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 16, 1992 |
| Grant date | Dec 6, 1994 |
| Priority date | — |
| Expiry date | Jun 16, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/927
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of filling vias and openings in semiconductor devices comprises first faceting the top of the openings, depositing in sequence a barrier layer, as of TiN, treating the barrier layer to reduce its porosity, depositing a titanium-containing wetting layer, sputter depositing a first layer of aluminum at low temperatures and sputter depositing a second layer of aluminum at high temperatures to fill the opening and planarize the layer. The improved method is carried out preferably in a multichamber sputtering system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.