Internal voltage generator for a non-volatile semiconductor memory device
US5371705A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 1993 |
| Grant date | Dec 6, 1994 |
| Priority date | — |
| Expiry date | May 24, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The semiconductor device includes a voltage generator for generating selectively a signal of a first level or a second level onto a first supply line, and a voltage converter using voltage signals on the first supply line and a second supply line for producing a signal of the voltage level on the first or the second supply line in accordance with an input signal, and a voltage level shifter for detecting the level of the voltage on the first supply line to shift in voltage level a signal on the second power supply line toward the first level when the voltage on the first supply line approaches the first level. The difference of the voltages on the first and second supply lines can be reduced to improve the break-down characteristics of a transistor included in the voltage converter, resulting in a reliable semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.