Pattern forming method
US5372914A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1993 |
| Grant date | Dec 13, 1994 |
| Priority date | — |
| Expiry date | Mar 24, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/122
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
On a substrate a protective layer is formed which can suppress the diffusion of a contaminant from the substrate. On the protective layer, thus formed, a resin layer is formed. The resin layer comprises a photosensitive composition containing a compound which has a substituent group capable of being decomposed or cross-linked in the presence of an acid, and a compound which can generate an acid when exposed to light. The resin layer is pattern-exposed to light and then baked at a predetermined temperature. The resin layer is developed, whereby the exposed portions of the resin layer are removed or left, thus forming a pattern comprising lines and spaces each having a predetermined width. Each of the lines of the pattern has a cross-section having neither sloped profile nor undercut profile, and the pattern therefore has an improved resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.