Method for forming isolation regions in a semiconductor memory device
US5372950A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1992 |
| Grant date | Dec 13, 1994 |
| Priority date | — |
| Expiry date | Mar 4, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an isolation region within a semiconductor device is disclosed. A trench is first formed in a predefined isolation region of a semiconductor substrate. An oxidation blocking material is injected into the inside walls of the trench before growing a field oxide film inside the trench. Accordingly, the present invention can simplify the fabrication of isolation regions within a semiconductor device by directly implanting the oxidation blocking material at a predetermined angle into the inside walls of the trench which constitutes the isolation region. In the present invention, unlike conventional fabrication processes using spacers to prevent penetration of a field oxide film into the surface of semiconductor non-isolation regions, the need for spacers is obviated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.