Yun-Gi Kim
55Patents
14h-index
69Co-inventors
87Inventor score
Filing activity: Jan 17, 1992 → May 31, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5360753A | Manufacturing method for a semiconductor isolation region | Electricity | 48 | Expired |
| US6258691A | Cylindrical capacitor and method for fabricating same | Electricity | 39 | Expired |
| US5444005A | Method for manufacturing a capacitor of a semiconductor memory device | Emerging Cross-Sectional Technologies | 28 | Expired |
| US5844832A | Cell array structure for a ferroelectric semiconductor memory and a method for sensing data from the same | Physics | 25 | Expired |
| US6214702A | Methods of forming semiconductor substrates using wafer bonding techniques and intermediate substrates formed thereby | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5372950A | Method for forming isolation regions in a semiconductor memory device | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5438013A | Method of making a semiconductor memory device having a capacitor | Electricity | 19 | Expired |
| US6255224A | Method of forming contact for semiconductor device | Electricity | 19 | Expired |
| US6649508B1 | Methods of forming self-aligned contact structures in semiconductor integrated circuit devices | Electricity | 19 | Expired |
| US5677234A | Methods of forming isolated semiconductor device active regions | Electricity | 18 | Expired |
| US8895400B2 | Methods of fabricating semiconductor devices having buried word line interconnects | Electricity | 16 | Active |
| US6881659B2 | Methods of forming self-aligned contact structures in semiconductor integrated circuit devices | Electricity | 15 | Expired |
| US9999641B2 | Treatment of clostridium difficile infection | Human Necessities | 15 | Active |
| US6880916B2 | Ink-jet printhead and method of manufacturing the same | Performing Operations; Transporting | 15 | Expired |
| US10064904B2 | Treatment of Clostridium difficile infection | Human Necessities | 13 | Active |
| US7411241B2 | Vertical type nanotube semiconductor device | Emerging Cross-Sectional Technologies | 13 | Active |
| US5796134A | Memory cells with a reduced area capacitor interconnect and methods of fabrication therefor | Electricity | 11 | Expired |
| US7622778B2 | Semiconductor device having shallow trench isolation structure comprising an upper trench and a lower trench including a void | Electricity | 10 | Active |
| US6848772B2 | Ink-jet printhead and method of manufacturing the same | Performing Operations; Transporting | 10 | Expired |
| US5801410A | Ferroelectric capacitors including extended electrodes | Electricity | 9 | Expired |
| US6458638B2 | Method for fabricating a semiconductor memory device having silicon-on-insulator (SOI) structure | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7964499B2 | Methods of forming semiconductor solar cells having front surface electrodes | Emerging Cross-Sectional Technologies | 7 | Active |
| US6576947B1 | Cylindrical capacitor and method for fabricating same | Electricity | 7 | Expired |
| US6080616A | Methods of fabricating memory cells with reduced area capacitor interconnect | Electricity | 6 | Expired |
| US6294806A | Semiconductor memory device having silicon-on-insulator (SOI) structure and method for fabricating thereof | Emerging Cross-Sectional Technologies | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.