Resist patterns and method of forming resist patterns
US5374502A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1993 |
| Grant date | Dec 20, 1994 |
| Priority date | — |
| Expiry date | Jun 25, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In accordance with a proposed resist pattern forming method, contact angles between the surface of a resist and a rinse is adjusted within a predetermined range, a volatil surfactant which does not remain by drying is mixed in the rinse so as to reduce a surface tension, the rinse is dried under a critical condition of the rinse in order not to cause the surface tension to exert. The occurrence of an attractive force between the resist patterns may be thereby weakened or nullified, so that falling of the patterns can be effectively prevented which very often happened at forming fine resist patterns or resist patterns of high aspect. On the other hand, depending upon structure of said resist pattern, it is possible to effectively prevent outermost main patterns of gathering resist patterns from falling down. By providing such effects, yieldings of products are increased. Further, the present invention may be also applied to a lithography illumination sources of which are light, electron, X-ray, ion beam, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.