Method of forming patterned polyimide films
US5374503A · kind A · utility
22Cited by
6References
4Claims
0Family size
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Key dates
| Filing date | Apr 13, 1993 |
| Grant date | Dec 20, 1994 |
| Priority date | — |
| Expiry date | Apr 13, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.