Surface emitting semiconductor laser and method of manufacture
US5375133A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1994 |
| Grant date | Dec 20, 1994 |
| Priority date | — |
| Expiry date | Mar 3, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser is provided with at least reflection mirrors on the substrate side composed of a first layer that is made of a Group III-V compound semiconductor and a second layer that is made of a Group III-V compound semiconductor with an energy bandgap that is larger than that of the first layer. The first and second layers are alternately stacked. The semiconductor laser is also composed of a distributive reflection multiple layer mirror that has an interface region between first and second layers having a carrier concentration that is higher than that of other regions. As a result, the multiple layer band structure of the distributive reflection mirror has been improved, current easily flows vertically through the multiple layers and the element resistance is low. In addition, a simple and reliable method is employed to fabricate the distributive reflection mirror because the doping concentration is controlled through dopant gas flow control or is controlled through light exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.