Transistor having a nonuniform doping channel and method for fabricating the same
US5376570A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1993 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Dec 2, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
An MOSFET having a nonuniform doping channel and a method for fabricating the same. The MOS transistor having a nonuniform doping channel is comprised of: a gate oxide film formed on a semiconductor substrate provided with a trench; a gate electrode of some size formed on the gate oxide film atop the trench and surroundings, the gate electrode having a portion longer than any other than portion and thus, being asymmetrical with regard to the axis passing the center of the trench; a source region formed in a predetermined portion of the semiconductor substrate neighboring a short portion of the gate electrode; a high density channel region formed by doping impurities having the same type with the semiconductor substrate in a predetermined portion of the semiconductor substrate below a longer portion of the gate electrode; and a drain region formed in a predetermined portion of the semiconductor substrate neighboring the high density channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.