Han-Sub Yoon
6Patents
4h-index
13Co-inventors
50Inventor score
Filing activity: Feb 20, 1991 → Sep 9, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5075248A | Method of making DRAM having a side wall doped trench and stacked capacitor structure | Electricity | 24 | Expired |
| US5821766A | Method and apparatus for measuring the metallurgical channel length of a semiconductor device | Electricity | 21 | Expired |
| US5907783A | Method of fabricating silicon-on-insulator substrate | Electricity | 10 | Expired |
| US8687424B2 | NAND flash memory of using common P-well and method of operating the same | Physics | 6 | Active |
| US5376570A | Transistor having a nonuniform doping channel and method for fabricating the same | Electricity | 3 | Expired |
| US5502322A | Transistor having a nonuniform doping channel | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.