Method for producing P-type impurity induced layer disordering

US5376583A · kind A · utility

Assignee

• Xerox Corporation · US

Inventors

• John E. Northrup · Palo Alto, US
• Thomas L. Paoli · Los Altos, US

Key dates

• Filing date: Dec 29, 1993
• Grant date: Dec 27, 1994
• Expiry date: Dec 29, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

P-type impurity induced layer disordering (IILD) in compound semiconductor structures or multilayer semiconductor material structures is produced by providing a source of a disordering agent during annealing multiple layers of III-V semiconductor material at high temperature under Group III material-rich conditions. For example, diffusion of silicon causes impurity induced layer disordering of GaAs/AlGaAs quantum well structures. By diffusing the silicon under gallium-rich conditions or from a gallium-rich source layer, the desired disordering is achieved simultaneously with p-type doped material. Silicon is an amphoteric dopant in gallium arsenide. Silicon occupies the gallium and arsenic sites with comparable frequencies with predominantly occupied site determined by the arsenic and gallium chemical potentials. Diffusion of silicon causes impurity induced layer disordering (IILD) of GaAs/AlGaAs quantum well structures. In this method, silicon is used to produce layer disordering in GaAs/AlGaAs heterostructures. The heterostructure material doped with silicon is annealed under extreme gallium-rich conditions or under a gallium-rich source layer to achieve the desired disordering s…