John E. Northrup
35Patents
10h-index
35Co-inventors
75Inventor score
Filing activity: Dec 29, 1993 → Jan 29, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6064078A | Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities | Electricity | 119 | Expired |
| US6416158B1 | Ballistic aerosol marking apparatus with stacked electrode structure | Performing Operations; Transporting | 42 | Expired |
| US9401452B2 | P-side layers for short wavelength light emitters | Electricity | 30 | Active |
| US6437374B1 | Semiconductor device and method of forming a semiconductor device | Electricity | 23 | Expired |
| US5455429A | Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material | Electricity | 23 | Expired |
| US9252329B2 | Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction | Electricity | 21 | Active |
| US5376583A | Method for producing P-type impurity induced layer disordering | Electricity | 19 | Expired |
| US6618418B2 | Dual III-V nitride laser structure with reduced thermal cross-talk | Electricity | 15 | Expired |
| US5608753A | Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material | Electricity | 14 | Expired |
| US6744072B2 | Substrates having increased thermal conductivity for semiconductor structures | Electricity | 11 | Expired |
| US6869821B2 | Method for producing organic electronic devices on deposited dielectric materials | Electricity | 10 | Expired |
| US5574745A | Semiconductor devices incorporating P-type and N-type impurity induced layer disordered material | Electricity | 9 | Expired |
| US8964796B2 | Structure for electron-beam pumped edge-emitting device and methods for producing same | Electricity | 8 | Active |
| US7235430B2 | Substrates having increased thermal conductivity for semiconductor structures | Electricity | 6 | Expired |
| US9112331B2 | Surface emitting laser incorporating third reflector | Electricity | 6 | Active |
| US9419194B2 | Transparent electron blocking hole transporting layer | Electricity | 5 | Active |
| US6583449B2 | Semiconductor device and method of forming a semiconductor device | Electricity | 5 | Expired |
| US9112332B2 | Electron beam pumped vertical cavity surface emitting laser | Electricity | 5 | Active |
| US9219189B2 | Graded electron blocking layer | Electricity | 4 | Active |
| US8330144B2 | Semi-polar nitride-based light emitting structure and method of forming same | Electricity | 3 | Active |
| US9124062B2 | Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector | Electricity | 3 | Active |
| US9705288B2 | Electron beam pumped vertical cavity surface emitting laser | Electricity | 1 | Active |
| US7310358B2 | Semiconductor lasers | Electricity | 1 | Expired |
| US8247249B2 | Semi-polar nitride-based light emitting structure and method of forming same | Electricity | 1 | Active |
| US9660134B1 | Nitride semiconductor polarization controlled device | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.