Semiconductor device having bipolar-mos composite element pellet suitable for pressure contacted structure
US5376815A · kind A · utility
14Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1993 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Sep 21, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a bipolar MOS composite element pellet suitable for a compression structure. In this pellet, a semiconductor substrate on which a MOS composite element is formed is electrically connected to an external part by an electrode plate compressed to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.