Method for chemical vapor deposition of titanium nitride films at low temperatures
US5378501A · kind A · utility
298Cited by
9References
9Claims
0Family size
Inventors
Key dates
| Filing date | Oct 5, 1993 |
| Grant date | Jan 3, 1995 |
| Priority date | — |
| Expiry date | Oct 5, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4584
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Titianium nitride film is deposited upon a semi-conductor substrate by chemical vapor deposition of titanium tetrachloride, ammonia and a diluent at temperatures less than 550.degree. C. This is accomplished by minimizing the boundary layer thickness over the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.