Joseph T. Hillman
54Patents
26h-index
53Co-inventors
91Inventor score
Filing activity: Jul 20, 1983 → Jun 20, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6161500A | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions | Chemistry; Metallurgy | 739 | Expired |
| US6368987B1 | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions | Chemistry; Metallurgy | 571 | Expired |
| US6183564A | Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system | Electricity | 415 | Expired |
| US5562947A | Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment | Chemistry; Metallurgy | 412 | Expired |
| US6274496A | Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing | Electricity | 354 | Expired |
| US5378501A | Method for chemical vapor deposition of titanium nitride films at low temperatures | Chemistry; Metallurgy | 298 | Expired |
| US5567243A | Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor | Electricity | 294 | Expired |
| US5628829A | Method and apparatus for low temperature deposition of CVD and PECVD films | Emerging Cross-Sectional Technologies | 232 | Expired |
| US5926737A | Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN wafer processing | Electricity | 201 | Expired |
| US5997649A | Stacked showerhead assembly for delivering gases and RF power to a reaction chamber | Chemistry; Metallurgy | 162 | Expired |
| US6586330B1 | Method for depositing conformal nitrified tantalum silicide films by thermal CVD | Electricity | 107 | Expired |
| US5866213A | Method for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor | Electricity | 88 | Expired |
| US5665640A | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor | Electricity | 86 | Expired |
| US5834371A | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof | Emerging Cross-Sectional Technologies | 82 | Expired |
| US6409837B1 | Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor | Chemistry; Metallurgy | 51 | Expired |
| US6455414B1 | Method for improving the adhesion of sputtered copper films to CVD transition metal based underlayers | Chemistry; Metallurgy | 48 | Expired |
| US6548112B1 | Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber | Chemistry; Metallurgy | 44 | Expired |
| US5593511A | Method of nitridization of titanium thin films | Emerging Cross-Sectional Technologies | 43 | Expired |
| US7521089B2 | Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers | Emerging Cross-Sectional Technologies | 41 | Expired |
| US5451258A | Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber | Chemistry; Metallurgy | 41 | Expired |
| US5567483A | Process for plasma enhanced anneal of titanium nitride | Electricity | 39 | Expired |
| US5610106A | Plasma enhanced chemical vapor deposition of titanium nitride using ammonia | Electricity | 32 | Expired |
| US6143128A | Apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6093645A | Elimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridation | Electricity | 29 | Expired |
| US5975912A | Low temperature plasma-enhanced formation of integrated circuits | Chemistry; Metallurgy | 27 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.