Barrier layers and aluminum contacts
US5378660A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1993 |
| Grant date | Jan 3, 1995 |
| Priority date | — |
| Expiry date | Feb 12, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/003
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In the manufacture of high temperature deposited aluminum contacts onto silicon substrates wherein a barrier layer of titanium nitride is used, the improvement wherein the titanium nitride contains oxygen. The improved contacts are made by depositing a titanium-containing layer onto a silicon substrate, performing a first, high temperature nitrogen anneal in vacuum to form a low resistance TiSi.sub.x contact to the silicon, and performing a second, lower temperature anneal in vacuum using a mixture of nitrogen and oxygen to add oxygen to the titanium nitride layer. This oxygen-containing titanium nitride layer provides an improved barrier to a subsequently deposited high temperature deposited aluminum layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.