Superconducting field effect transistor with increased channel length
US5380704A · kind A · utility
13Cited by
8References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1993 |
| Grant date | Jan 10, 1995 |
| Priority date | — |
| Expiry date | Aug 30, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/207
Abstract
Disclosed herein is a superconducting field effect transistor (FET) which has at least an active region formed from a film of oxide normal conductor, a plurality of electrodes formed from a film of oxide superconductor, and a means to control the current which flows between the electrodes through the active region. Having a much greater electrode distance than the conventional superconducting device, it can be produced easily by lithography without resorting to special techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.