Masahiko Hiratani
39Patents
10h-index
53Co-inventors
78Inventor score
Filing activity: Nov 21, 1985 → Aug 23, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4645726A | Solid state lithium battery | Electricity | 77 | Expired |
| US6451665B1 | Method of manufacturing a semiconductor integrated circuit | Electricity | 31 | Expired |
| US6743739B2 | Fabrication method for semiconductor integrated devices | Electricity | 27 | Expired |
| US6326218A | Semiconductor integrated circuit and its manufacturing method | Electricity | 25 | Expired |
| US7408218B2 | Semiconductor device having plural dram memory cells and a logic circuit | Electricity | 24 | Expired |
| US5077266A | Method of forming weak-link Josephson junction, and superconducting device employing the junction | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6544834B1 | Method of forming a semiconductor device including a capacitor with tantalum oxide (Ta2O5) | Electricity | 13 | Expired |
| US5380704A | Superconducting field effect transistor with increased channel length | Electricity | 13 | Expired |
| US5250506A | Superconductive switching element with semiconductor channel | Electricity | 11 | Expired |
| US6503791B2 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device | Electricity | 11 | Expired |
| US6787451B2 | Semiconductor device and manufacturing method thereof | Electricity | 10 | Expired |
| US6992022B2 | Fabrication method for semiconductor integrated devices | Electricity | 10 | Expired |
| US5914068A | Bi-layer oxide ferroelectrics | Chemistry; Metallurgy | 10 | Expired |
| US6576928B2 | Semiconductor device capacitor with high permittivity tantalum pentoxide/niobium pentoxide dielectric | Electricity | 9 | Expired |
| US6555429B2 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device | Electricity | 9 | Expired |
| US6833577B2 | Semiconductor device | Electricity | 8 | Expired |
| US6867090B2 | Semiconductor device and method of manufacturing thereof | Electricity | 7 | Expired |
| US6483143B2 | Semiconductor device having a capacitor structure including a self-alignment deposition preventing film | Electricity | 7 | Expired |
| US6534375B2 | METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS | Electricity | 7 | Expired |
| US6144052A | Semiconductor device and its manufacture | Electricity | 7 | Expired |
| US8106441B2 | Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same | Electricity | 6 | Active |
| US7683419B2 | Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same | Electricity | 6 | Active |
| US5151409A | Superconducting composition comprising Ln-Th-Cu-O, wherein Ln is Pr, Nd, Pm, Sm, Eu, Gd, Er or mixtures thereof | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6720603B2 | CAPACITOR STRUCTURE AND A SEMICONDUCTOR DEVICE WITH A FIRST METAL LAYER, A SECOND METAL SILICIDE LAYER FORMED OVER THE FIRST METAL LAYER AND A SECOND METAL LAYER FORMED OVER THE SECOND METAL SILICIDE LAYER | Electricity | 5 | Expired |
| US7804118B2 | Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.