Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF.sub.3 or CHCl.sub.2 CF.sub.3 as an etch gas
US5382320A · kind A · utility
13Cited by
4References
11Claims
0Family size
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Key dates
| Filing date | Jul 22, 1993 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | Jul 22, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are etched in an etching gas of O.sub.2 mixed with either CHCl.sub.2 CF.sub.3 or CHClFCF.sub.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.