Processes for electron lithography
US5382498A · kind A · utility
11Cited by
5References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 16, 1992 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | Dec 16, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Projection lithographic systems relying on radiant energy such as electrons and ion beams are substantially affected by the distance between the projection mask and the substrate. In particular, to avoid undesirable limitation of the obtainable resolution, this distance should be a meter or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.