Patent · US Expired

TM-polarized laser emitter using III-V alloy with nitrogen

US5383211A · kind A · utility

59Cited by
4References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 2, 1993
Grant dateJan 17, 1995
Priority date—
Expiry dateNov 2, 2013

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/145
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A semiconductor laser source using a strained active layer of InGaAsN, introduced by the addition of N in the alloy, to obtain semiconductor laser sources that emit TM-polarized light in the wavelength range above 850 nm. The presence of N in the alloy reduces the lattice constant and produces the desired strain effect, i.e., biaxial tension which raises the light hole band (yielding TM polarization) and produces a narrowing of the band gap. Adding In can reduce the strain in the alloy while maintaining the desired band gap and light-hole/heavy-hole ordering.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.