Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practicing said method
US5383970A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1992 |
| Grant date | Jan 24, 1995 |
| Priority date | — |
| Expiry date | Dec 28, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4486
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition method for forming a deposited film on a substrate using a film-forming liquid raw material in which said film-forming liquid raw material is pulverizing into liquid fine particles and said liquid fine particles are heated together with a gas to produce a film-forming raw material gas; said film-forming raw material gas is introduced into a reaction chamber; and said film-forming raw material gas is chemically reacted with a surface of a substrate disposed in said reaction chamber. A chemical vapor deposition apparatus suitable for practicing said chemical vapor deposition method, characterized by a liquid pulverizing mechanism capable of pulverizing a film-forming liquid raw material into liquid fine particles while precisely adjusting the amount of the film-forming liquid raw material to be supplied thereinto and a liquid gasifying mechanism capable of efficiently gasifying the liquid fine particles to produce a film-forming raw material gas into a reaction chamber in which a deposited film is to be formed on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.