Plasma processing apparatus etching tunnel-type
US5383984A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 17, 1993 |
| Grant date | Jan 24, 1995 |
| Priority date | — |
| Expiry date | Jun 17, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/912
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus comprising a process tube for enclosing a plurality of semiconductor wafers, injectors for introducing process gas into the process tube, a vacuum pump for exhausting the process tube, RF electrodes arranged along the outer circumference of the process tube and serving to generate high frequency electric field, when power is supplied, in a process-gas-introduced region so as to make process gas into plasmas, a high frequency power source for supplying power to the RF electrodes, heaters arranged in the process tube to directly heat the plural wafers, a power supply for supplying power to the heaters, and a controller for controlling the amount of power supplied from the power supply to the heaters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.