Methods for making and using a shallow semiconductor junction
US5384269A · kind A · utility
4Cited by
8References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 31, 1994 |
| Grant date | Jan 24, 1995 |
| Priority date | — |
| Expiry date | Mar 31, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28575
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a shallow junction in a gallium arsenide substrate including implanting doping ions into an upper surface of the substrate and incorporating sulfur into the upper surface of the substrate after the ion implantation. A capping layer is deposited on the upper surface and the substrate is heat annealed to activate the doping atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.