Jaeshin Cho
12Patents
6h-index
14Co-inventors
63Inventor score
Filing activity: Jun 22, 1992 → Sep 1, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5444016A | Method of making ohmic contacts to a complementary III-V semiconductor device | Emerging Cross-Sectional Technologies | 47 | Expired |
| US5484740A | Method of manufacturing a III-V semiconductor gate structure | Emerging Cross-Sectional Technologies | 39 | Expired |
| US5707901A | Method utilizing an etch stop layer | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6057219A | Method of forming an ohmic contact to a III-V semiconductor material | Electricity | 7 | Expired |
| US5512518A | Method of manufacture of multilayer dielectric on a III-V substrate | Electricity | 6 | Expired |
| US5389564A | Method of forming a GaAs FET having etched ohmic contacts | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5619064A | III-V semiconductor gate structure and method of manufacture | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5583355A | Self-aligned FET having etched ohmic contacts | Emerging Cross-Sectional Technologies | 4 | Expired |
| US5384269A | Methods for making and using a shallow semiconductor junction | Electricity | 4 | Expired |
| US5387548A | Method of forming an etched ohmic contact | Emerging Cross-Sectional Technologies | 2 | Expired |
| US11380625B2 | Shielding structure, semiconductor package structure with shielding structure | Electricity | 0 | Active |
| US6334929B1 | Plasma processing method | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.