Method of producing silicon carbide MOSFET
US5384270A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 10, 1993 |
| Grant date | Jan 24, 1995 |
| Priority date | — |
| Expiry date | Nov 10, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of producing a silicon carbide MOSFET, a predetermined conductivity type region having a predetermined depth is formed in an SiC layer through ion injection and heat treatment activation by utilizing the fact that the range of impurity ions at the time of ion injection can be controlled by an acceleration voltage to thereby avoid a disadvantage of an SiC crystal in which diffusion of impurity is hardly generated. For example, ions are injected into an n-type SiC semiconductor layer by using, as a mask, a gate electrode having an inclined surface at its end surface to thereby form a p-type region having a curved surface in an interface. Alternatively, a part of a p-type SiC epitaxial layer on an n-type SiC substrate is left as a p-type base layer, and an n-type region is formed through ion injection and connected to a substrate portion under the n-type region to thereby form an n-type base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.