Katsunori Ueno
110Patents
23h-index
66Co-inventors
93Inventor score
Filing activity: Sep 28, 1984 → Mar 30, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6291856A | Semiconductor device with alternating conductivity type layer and method of manufacturing the same | Electricity | 149 | Expired |
| US5693569A | Method of forming silicon carbide trench mosfet with a schottky electrode | Emerging Cross-Sectional Technologies | 145 | Expired |
| US6621132B2 | Semiconductor device | Electricity | 101 | Expired |
| US6096607A | Method for manufacturing silicon carbide semiconductor device | Electricity | 94 | Expired |
| US6117735A | Silicon carbide vertical FET and method for manufacturing the same | Electricity | 90 | Expired |
| US6054352A | Method of manufacturing a silicon carbide vertical MOSFET | Emerging Cross-Sectional Technologies | 87 | Expired |
| US6724042B2 | Super-junction semiconductor device | Electricity | 78 | Expired |
| US5614749A | Silicon carbide trench MOSFET | Emerging Cross-Sectional Technologies | 74 | Expired |
| US6677643B2 | Super-junction semiconductor device | Electricity | 73 | Expired |
| US5384270A | Method of producing silicon carbide MOSFET | Emerging Cross-Sectional Technologies | 71 | Expired |
| US6265326A | Method for forming thermal oxide film of silicon carbide semiconductor device | Emerging Cross-Sectional Technologies | 70 | Expired |
| US5895939A | Silicon carbide field effect transistor with increased avalanche withstand capability | Electricity | 67 | Expired |
| US6136727A | Method for forming thermal oxide film of silicon carbide semiconductor device | Electricity | 53 | Expired |
| US6696728B2 | Super-junction semiconductor device | Electricity | 47 | Expired |
| US6475864B1 | Method of manufacturing a super-junction semiconductor device with an conductivity type layer | Electricity | 45 | Expired |
| US6512268B1 | Super-junction semiconductor device | Electricity | 45 | Expired |
| US5789311A | Manufacturing method of SiC Schottky diode | Electricity | 44 | Expired |
| US6674126B2 | Semiconductor device | Electricity | 44 | Expired |
| US6903418B2 | Semiconductor device | Electricity | 32 | Expired |
| US5963807A | Silicon carbide field effect transistor with increased avalanche withstand capability | Electricity | 28 | Expired |
| US7002205B2 | Super-junction semiconductor device and method of manufacturing the same | Electricity | 27 | Expired |
| US7029977B2 | Fabrication method of semiconductor wafer | Electricity | 26 | Expired |
| US6700141B2 | Semiconductor device | Electricity | 25 | Expired |
| US6693323B2 | Super-junction semiconductor device | Electricity | 22 | Expired |
| US6238980A | Method for manufacturing silicon carbide MOS semiconductor device including utilizing difference in mask edges in implanting | Electricity | 22 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.