Non-conformal and oxidizable etch stops for submicron features
US5384281A · kind A · utility
20Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1992 |
| Grant date | Jan 24, 1995 |
| Priority date | — |
| Expiry date | Dec 29, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/97
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for etching narrow features, particularly submicron borderless contacts, in a semiconductor substrate is disclosed. The process comprises depositing, by an orientation-sensitive technique, film which will act as an etch stop. The film is significantly thicker on horizontal surfaces than on vertical. A second layer is deposited and then etched using the first film as an etch stop. In one embodiment the etch stop is composed of an oxidizable material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.