Process for increasing sacrificial oxide etch rate to reduce field oxide loss
US5385630A · kind A · utility
49Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1993 |
| Grant date | Jan 31, 1995 |
| Priority date | — |
| Expiry date | Jun 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
N.sub.2 implantation is used to increase the etch rate of a sacrificial oxide (sometimes referred to as the first gate oxide) in integrated circuitry. This implantation allows etching selectivity by changing the relative etch rates of materials. In the specific implementation described, a field oxide is also provided and this implantation increases the etch rate of the sacrificial oxide relative to that of the field oxide. No heat treatment is applied to the implanted material prior to etching having the ability to repair the damage caused by the bombardment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.