Inventor · Portland, OR, US

Brian S. Doyle

378Patents
54h-index
156Co-inventors
93Inventor score

Filing activity: Mar 4, 1993 → Apr 14, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6858478B2 Tri-gate devices and methods of fabrication Emerging Cross-Sectional Technologies 426 Expired
US7326656B2 Method of forming a metal oxide dielectric Emerging Cross-Sectional Technologies 424 Expired
US7105390B2 Nonplanar transistors with metal gate electrodes Electricity 366 Expired
US6423614B1 Method of delaminating a thin film using non-thermal techniques Electricity 359 Expired
US7662689B2 Strained transistor integration for CMOS Electricity 321 Expired
US6063688A Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition Emerging Cross-Sectional Technologies 297 Expired
US6281532A Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering Electricity 250 Expired
US6054370A Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer Emerging Cross-Sectional Technologies 246 Expired
US6605498B1 Semiconductor transistor having a backfilled channel material Electricity 231 Expired
US6228694A Method of increasing the mobility of MOS transistors by use of localized stress regions Electricity 230 Expired
US7563701B2 Self-aligned contacts for transistors Electricity 229 Expired
US6909151B2 Nonplanar device with stress incorporation layer and method of fabrication Electricity 187 Expired
US6790704B2 Method for capacitively coupling electronic devices Electricity 180 Expired
US7456476B2 Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication Electricity 173 Expired
US7531437B2 Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material Emerging Cross-Sectional Technologies 172 Expired
US6362082B1 Methodology for control of short channel effects in MOS transistors Electricity 164 Expired
US7825437B2 Unity beta ratio tri-gate transistor static random access memory (SRAM) Electricity 162 Active
US7485536B2 Abrupt junction formation by atomic layer epitaxy of in situ delta doped dopant diffusion barriers Electricity 144 Expired
US7268058B2 Tri-gate transistors and methods to fabricate same Electricity 144 Expired
US7183597B2 Quantum wire gate device and method of making same Emerging Cross-Sectional Technologies 141 Expired
US7170120B2 Carbon nanotube energy well (CNEW) field effect transistor Emerging Cross-Sectional Technologies 136 Expired
US5596218A Hot carrier-hard gate oxides by nitrogen implantation before gate oxidation Electricity 125 Expired
US7037790B2 Independently accessed double-gate and tri-gate transistors in same process flow Electricity 120 Expired
US7531393B2 Non-planar MOS structure with a strained channel region Electricity 119 Active
US7358121B2 Tri-gate devices and methods of fabrication Emerging Cross-Sectional Technologies 117 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.