Method for forming a film on a substrate by activating a reactive gas
US5385763A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1994 |
| Grant date | Jan 31, 1995 |
| Priority date | — |
| Expiry date | Mar 1, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film forming method comprises the steps of supporting a semiconductor substrate having a trench or an unevenness thereon in a reaction vessel; introducing a reactive gas into the vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least part of the deposit species on the substrate while retaining a pressure in the vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.