Film uniformity by selective pressure gradient control
US5387289A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 1992 |
| Grant date | Feb 7, 1995 |
| Priority date | — |
| Expiry date | Sep 22, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system for depositing a film on a substrate in a CVD process has a second-source injection sub-system for injecting a control gas. The deposition rate of the material deposited in the CVD process is a function of the concentration of the control gas at the point that material is deposited. The second source injection sub-system provides a concentration gradient of the control gas relative to the substrate surface coated, and alters the thickness uniformity of the film. By controlling the gradient one may control the thickness uniformity profile. In another embodiment, the invention applies to dry etching with reactive gas, and the etching rate is controlled by second source provision of a control gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.