Patent · US Expired

High selective nitride etch

US5387312A · kind A · utility

13Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 9, 1993
Grant dateFeb 7, 1995
Priority date—
Expiry dateJul 9, 2013

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/31116
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A cleaner, selective etch process wherein NF.sub.3 ions and nitrogen ions are employed to bombard a patterned nitride layer disposed superjacent an oxide layer, thereby creating substantially vertical sidewalls, especially useful when etching submicron features.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.