Method of making a semiconductor device including carbon as a dopant
US5387544A · kind A · utility
12Cited by
5References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 21, 1994 |
| Grant date | Feb 7, 1995 |
| Priority date | — |
| Expiry date | Mar 21, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
While producing a III-V compound semiconductor layer, carbon is added to group III and V elements to control the p type conductivity of the semiconductor layer, forming a p type region. Then, a small amount of n type dopant is added to the group III and V elements together with the carbon to control the n type conductivity of the semiconductor layer, forming an n type region. Therefore, a sharp and precisely-controlled doping profile is obtained in the vicinity of the p-n junction, resulting in a semiconductor device having high initial-performance and high reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.