Method for manufacturing a semiconductor device
US5387546A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 22, 1992 |
| Grant date | Feb 7, 1995 |
| Priority date | — |
| Expiry date | Jun 22, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for manufacturing a semiconductor device including a method for reforming an insulating film formed by a low temperature CVD method. It is an object of the present Invention to provide a method for manufacturing a semiconductor device capable of improving a film quality of an insulating film formed by a CVD method which is able to form a film at a low temperature and also capable of maintaining mass productivity, in which processing by irradiation with ultraviolet rays of the insulating film while heating the film after forming an insulating film (4) on a body to be formed by a chemical vapor deposition method is included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.