Method of forming an etched ohmic contact
US5387548A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 4, 1993 |
| Grant date | Feb 7, 1995 |
| Priority date | — |
| Expiry date | Oct 4, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/02
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention includes forming an etched ohmic contact (10, 9) by applying a layer of an etch susceptible contact material (14) to a III-V semiconductor substrate (11). A portion of the contact layer (14A) is alloyed with the substrate (11) to form are etch resistant area (14A) of the contact layer. The contact layer (14) is selectively etched to remove etch susceptible portions of the contact layer while leaving the etch resistant area (14A) on the substrate (11). Another alloy operation is performed to form ohmic contact between the etch resistant area (14A) and the substrate (11). Consequently, an etch ohmic contact (10, 9) that is substantially devoid of gold is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.