Method for fabricating microwave heterojunction bipolar transistors with emitters designed for high power applications
US5389554A · kind A · utility
22Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1993 |
| Grant date | Feb 14, 1995 |
| Priority date | — |
| Expiry date | Nov 30, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/936
Abstract
In one form of the invention, an emitter structure for a bipolar transistor is disclosed. The structure is comprised of an emitter layer 6 of Al.sub.x Ga.sub.1-x As, where x>0.4, abutting a base layer 8.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.