Method of fabricating high threshold metal oxide silicon read-only-memory transistors
US5389565A · kind A · utility
3Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1994 |
| Grant date | Feb 14, 1995 |
| Priority date | — |
| Expiry date | Jan 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
Abstract
A method of forming ROM transistor memory cell including not forming lightly doped regions in the semiconductor substrate for some of the memory cells so as to form one type of memory cell and forming the lightly doped regions in another type of memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.