High density TEOS-based film for intermetal dielectrics
US5389581A · kind A · utility
12Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 1993 |
| Grant date | Feb 14, 1995 |
| Priority date | — |
| Expiry date | May 25, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.