Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps
US5391510A · kind A · utility
233Cited by
17References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1994 |
| Grant date | Feb 21, 1995 |
| Priority date | — |
| Expiry date | Apr 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A sub-micron FET is disclosed made by a method using expendable self-aligned gate structure up to and including the step of annealing the source/drain regions. The source/drain regions are formed by ion implantation using the expendable structure (diamond-like-carbon) as a mask. After the expendable structure has performed its further purpose of protecting the gate dielectric from contamination during the annealing cycle, the structure is easily removed by O.sub.2 plasma and replaced by a conventional metal gate material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.