Process for forming a conductive layer for semiconductor devices
US5393703A · kind A · utility
24Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1993 |
| Grant date | Feb 28, 1995 |
| Priority date | — |
| Expiry date | Nov 12, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/927
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An aluminum-nickel-chromium (Al-Ni-Cr) layer used as an interconnect within a semiconductor device is disclosed. The Al-Ni-Cr layer has about 0.1-0.5 weight percent nickel and about 0.02-0.1 weight percent chromium. Usually, the nickel or chromium concentrations are no greater than 0.5 weight percent. The layer is resistant to electromigration and corrosion. The low nickel and chromium concentrations allow the layer to be deposited and patterned similar to most aluminum-based layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.