Method of (111) group II-VI epitaxial layer grown on (111) silicon substrate
US5394826A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1993 |
| Grant date | Mar 7, 1995 |
| Priority date | — |
| Expiry date | Oct 22, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A group II-VI epitaxial layer grown on a (111) silicon substrate has a lattice mismatch which is minimized, as between the group II-VI epitaxial layer and the silicon substrate. The grown group II-VI epitaxial layer also has a (111) plane at the interface with the substrate, and a 30.degree. in-plane rotation slip is formed at the interface between the (111) silicon substrate and the group II-VI epitaxial layer. The above structure is produced by a metal organic chemical vapor deposition method (MOCVD), in which a mol ratio of a group VI gas source supply to a group II gas source supply is kept greater than 15 during the growth. The (111) silicon substrate is preferably mis-oriented toward the <110> direction of the silicon substrate. When a HgCdTe layer is grown on the epitaxial layer, the product thus formed has utility as a monolithic infrared detector in which a plurality of detector elements are formed in the HgCdTe layer and a signal processing circuit is formed in the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.