Hiroji Ebe
10Patents
5h-index
14Co-inventors
59Inventor score
Filing activity: Dec 9, 1992 → Dec 16, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5728425A | Method for chemical vapor deposition of semiconductor films by separate feeding of source gases and growing of films | Chemistry; Metallurgy | 409 | Expired |
| US6445000B1 | Photodetecting device | Electricity | 21 | Expired |
| US7015498B2 | Quantum optical semiconductor device | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5394826A | Method of (111) group II-VI epitaxial layer grown on (111) silicon substrate | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5302232A | (111) Group II-VI epitaxial layer grown on (111) silicon substrate | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7829880B2 | Quantum dot semiconductor device | Emerging Cross-Sectional Technologies | 4 | Active |
| US6992320B2 | Semiconductor optical device with quantum dots having internal tensile or compressive strain | Emerging Cross-Sectional Technologies | 2 | Expired |
| US8183073B2 | Method of manufacturing a semiconductor device with quantum dots formed by self-assembled growth | Electricity | 2 | Active |
| US7456422B2 | Semiconductor device | Electricity | 1 | Active |
| US7892871B2 | Method of manufacturing semiconductor device with quantum dots formed by self-assembled growth | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.