MOSFET with gate-penetrating halo implant
US5395773A · kind A · utility
45Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1994 |
| Grant date | Mar 7, 1995 |
| Priority date | — |
| Expiry date | Mar 31, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
After gates are patterned in a submicron CMOS process, a halo implant is performed with sufficient energy that the halo implant penetrates the gate structures to below the transistor channel regions. Where the substrate is not masked by gate materal, the halo implant penetrates below drain and source regions. During diffusion, this halo limits lateral diffusion of the source/drain dopants. The resulting transistor exhibits enhanced breakdown voltage characteristics during both on and off conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.