Electrically programmable internal power voltage generating circuit
US5396113A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1992 |
| Grant date | Mar 7, 1995 |
| Priority date | — |
| Expiry date | Jul 31, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An internal power voltage generating circuit of a semiconductor memory device may be constructed with a voltage sensing circuit (100) and a reference voltage controller (300) providing an internal power voltage int. V.sub.CC of a given reference voltage amplitude V.sub.ref and an external power voltage amplitude ext. V.sub.CC. Thus, when a high voltage over an operating voltage of a chip is applied to a pad (10) of the chip, the internal power voltage is raised to the level of the external power voltage. Therefore, when stress is added to the chip during a "burn-in-test", the defective chip is easily detected. Consequently, the reliability of those semiconductor memory devices subjected to post-manufacturing testing can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.