Method of fabricating a silicon carbide vertical MOSFET
US5397717A · kind A · utility
17Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1993 |
| Grant date | Mar 14, 1995 |
| Priority date | — |
| Expiry date | Jul 12, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/148
Abstract
A silicon carbide vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. An opening is formed in some of the epitaxial layers and a conductive layer is formed therein to electrically connect a drain contact on the rear of the substrate to the components on the front of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.